High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates

On Channel Shape Variation of 10-nm-Gate Gate-All-Around Silicon Nanowire MOSFETs

Recently, gate-all-around (GAA) nanowire field effect transistors (NWFETs) have attracted increasing attention due to their superior gate control and short channel effect immunity [1-4]. However, confined by the limitation of manufacturing process, the different aspect ratio (AR) results in different shapes of channel cross section, such as ellipse-shaped or rectangular-shaped instead of the id...

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels

A novel gate-all-around (GAA) poly-Si nanowire (NW) floating gate (FG) memory device was fabricated and characterized. The enhanced electric field around the corners of the nanowire channels boosts the P/E process and thus the operation voltages are dramatically lowered. Furthermore, the non-localized trapping feature characteristic of the FG makes the injection or ejection of electrons easier ...

Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs

Gate-All-Around Silicon Nanowire MOSFETs: Top-down Fabrication and Transport Enhancement Techniques

Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture with a Si nanowire channel is a promising candidate for future technology generations. The gate-all-around geometry enhances the electrostatic control and hence gate length...